- 您现在的位置：买卖IC网 > Sheet目录413 > FCA35N60 (Fairchild Semiconductor)MOSFET N-CH 600V 35A TO-3PN
November 2013
FCA35N60
N-Channel SuperFET ? MOSFET
600 V, 35 A, 98 m Ω
Features
? 650V @ T J = 150°C
? Typ. R DS(on) = 79 m Ω
? Ultra Low Gate Charge (Typ. Q g = 139 nC )
? Low Effective Output Capacitance (Typ. C oss(eff.) = 340 pF )
? 100% Avalanche Tested
Applications
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? Solar Inverter
? AC-DC Power Supply
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCA35N60
600
Unit
V
V GSS
I D
Gate-Soure voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
35
22.2
V
A
I DM
Drain Current
- Pulsed
(Note 1)
105
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1455
35
31.25
20
312.5
2.5
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FCA35N60
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.4
42
o
C/W
?2009 Fairchild Semiconductor Corporation
FCA35N60 Rev. C1
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FCA36N60NF
MOSFET N-CH 600V 34.9A TO3PN
FCA47N60_F109
MOSFET N-CH 600V 47A TO-3P
FCA47N60F
MOSFET N-CH 600V 47A TO-3PN
FCA76N60N
MOSFET N-CH 600V 76A TO-3PN
FCB20N60FTM
MOSFET N-CH 600V 20A D2PAK
FCB20N60TM
MOSFET N-CH 600V 20A D2PAK
FCB36N60NTM
MOSFET N-CH 600V 36A D2PAK
FCD4N60TM_WS
MOSFET N-CH 600V 3.9A DPAK
相关代理商/技术参数
FCA36N60NF
功能描述:MOSFET 600V N-Ch SupreMOS FRFET MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCA-3R6334-R
制造商:COOPER BUSSMANN 功能描述:CAP 0.33 F SERIES & AB F-SERIES
FCA-410
制造商:MACOM 制造商全称:Tyco Electronics 功能描述:Tyco Electronics Mid-Range Military/Aerospace Relays 10 AMPERES, DPDT
FCA-410-0
制造商:Struthers-Dunn 功能描述:
FCA4100RJ
功能描述:线绕电阻器 - 透孔 FCA4 100R 5% LP RoHS:否 制造商:Bourns 电阻:10 Ohms 容差:5 % 功率额定值:7 W 温度系数:200 PPM / C 系列:FW 端接类型:Axial 工作温度范围:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封装:Ammo 产品:Power Resistors Wirewound High Energy
FCA-410-1
制造商:Struthers-Dunn 功能描述:
FCA-410-10
制造商:TE Connectivity 功能描述:
FCA-410-104
制造商:TE Connectivity 功能描述: